MOSFET
Description
MOSFET
CJ2101-G
RoHS Device
V(BR)DSS -20V
RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V
ID -1.4A
Features
- P-Channel MOSFET - Leading trench technology for low RDS(on)
extending battery life
Mechanical data
- Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750,
method 2026. - Weight: 0.008 grams(approx.).
Comchip SMD Diode Spe...
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