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TIP122

Part Number	TIP122
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Oct 25, 2016
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emit...
Datasheet	TIP122 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.
0V(Max)@ IC= 3A = 4.
0V(Max)@ IC= 5A ·Complement to Type TIP127 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TIP122 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM C...

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