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V40PW45C

Vishay
Part Number V40PW45C
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Oct 27, 2016
Detailed Description www.vishay.com V40PW45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Scho...
Datasheet PDF File V40PW45C PDF File

V40PW45C
V40PW45C

Overview
www.
vishay.
com V40PW45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
33 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (TO-252AE) PIN 1 K PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models K FEATURES • Very low profile - typical height of 1.
3 mm Available • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 40 A 45 V 240 A VF at IF = 20 A (TA = 125 °C) 0.
49 V TJ max.
Package 150 °C SlimDPAK (TO-252AE) Circuit configuration Common cathode MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40PW45C Device marking code V40PW45C Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.
1) per device per diode VRRM IF(AV) (1) 45 40 20 Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Operating junction temperature range Storage temperature range IFSM TJ (2) TSTG 240 -40 to +150 -55 to +150 Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA UNIT V A A A °C °C Revi...


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