N-Channel MOSFET
Description
MSN0380D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Application...
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