MSN15B0K
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =150V,ID =100A RDS(ON) <12mΩ @ VGS=10V
(Typ:9.8mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for ...
