MSN15B5H
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ）
● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for g...
