Silicon Carbide Power MOSFET
Description
VDS
900 V
C3M0065090D
ID @ 25˚C
36 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, ...
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