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C3M0065090J

Part Number	C3M0065090J
Manufacturer	Cree
Description	Silicon Carbide Power MOSFET
Published	Nov 3, 2016
Detailed Description	C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel...
Datasheet	C3M0065090J PDF File

Overview

C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • New low impedance package with driver source pin • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Increase power density • Increase system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch...

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