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TIP30D

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Silicon PNP Power Transistor


Description
isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 120V(Min) ·Complement to Type TIP32D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAX...



Inchange Semiconductor

TIP30D

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