Silicon PNP Power Transistor
Description
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 120V(Min) ·Complement to Type TIP32D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAX...
Inchange Semiconductor
TIP30D PDF File
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