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TIP35F

Part Number	TIP35F
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon NPN Power Transistor TIP35F DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sust...
Datasheet	TIP35F PDF File

Overview

isc Silicon NPN Power Transistor TIP35F DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min) ·Complement to Type TIP36F ·Current Gain-Bandwidth Product- : fT= 3.
0MHz(Min)@IC= 1.
0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current ...

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