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IS42RM32100D

Part Number	IS42RM32100D
Manufacturer	ISSI
Description	512K x 32Bits x 2Banks Low Power Synchronous DRAM
Published	Nov 7, 2016
Detailed Description	IS42/45SM/RM/VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100D are low po...
Datasheet	IS42RM32100D PDF File

Overview

IS42/45SM/RM/VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits.
These products are offering fully synchronous operation and are referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve high bandwidth.
All input and output voltage levels are compatible with LVCMOS.
Features  JEDEC standard 3.
3V, 2.
5V, 1.
8V power supply.
• Auto refresh and self refresh.
• All pins are compatible with LVCMOS interface.
• 4K refresh cycle / 64ms.
• Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
• Programmable CAS Latency : 2,3 clocks.
• All inputs and outputs referenced to the positive edge of the system clock.
• Data mask function by DQM.
• Internal d...

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