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IS61LF12832EC

ISSI
Part Number IS61LF12832EC
Manufacturer ISSI
Description SYNCHRONOUS FLOW-THROUGH SRAM
Published Nov 7, 2016
Detailed Description IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC 128K x36/32 and 2...
Datasheet PDF File IS61LF12832EC PDF File

IS61LF12832EC
IS61LF12832EC

Overview
IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES DESCRIPTION APRIL 2017  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs and data outputs  Auto Power-down during deselect The 4Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.
The IS61(64)LF/VF12836EC are organized as 131,072 words by 36bits.
The IS61(64)LF/VF12832EC are organized as 131,072 words by 32bits.
The IS61(64)LF/VF25618EC are organized as 262,144 words by 18 bits.
Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit bu...


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