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IS67WVE1M16TALL

ISSI
Part Number IS67WVE1M16TALL
Manufacturer ISSI
Description 16Mb Async/Page PSRAM
Published Nov 7, 2016
Detailed Description IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE...
Datasheet PDF File IS67WVE1M16TALL PDF File

IS67WVE1M16TALL
IS67WVE1M16TALL

Overview
IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current drain.
The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  ALL: VDD 1.
7V~1.
95V, VDDQ 1.
7V~1.
95V  BLL: VDD 2.
7V~3.
6V, VDDQ 2.
7V~3.
6V  CLL: VDD 1.
7V~1.
95V, VDDQ 2.
7V~3.
6V  Page mode read access  Interpage Read access : 60ns, 70ns  Intrapage Read access : 25ns  Low Power Consumption  Asynchronous Opera...


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