DatasheetsPDF.com

KTC2200

Part Number	KTC2200
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Nov 14, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switchin...
Datasheet	KTC2200 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applicaition.
·High voltage switching application.
·High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150...

Similar Datasheet

KTC2200 Silicon NPN Power Transistors - Inchange Semiconductor
KTC2201 Silicon NPN Power Transistors - Inchange Semiconductor
KTC2202 Silicon NPN Power Transistors - Inchange Semiconductor
KTC2235 Silicon NPN Transistor - KEC
KTC2236 Silicon NPN Transistor - ETC
KTC2236A Transistors - Korea Electronics
KTC2238 EPITAXIAL PLANAR NPN TRANSISTOR - KEC
KTC2238 NPN Transistor - INCHANGE
KTC2238A NPN Transistor - INCHANGE
KTC2238A EPITAXIAL PLANAR NPN TRANSISTOR - KEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)