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KTC4419

Inchange Semiconductor
Part Number KTC4419
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
Published Nov 14, 2016
Detailed Description isc Silicon NPN Power Transistor KTC4419 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ...
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KTC4419
KTC4419

Overview
isc Silicon NPN Power Transistor KTC4419 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ·High voltage switching applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperatur...


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