Silicon NPN Power Transistors
Description
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1510
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain
: hFE= 5000(Min) @ IC= 7A, VCE= 4V ·Complement to Type KTB2510
APPLICATIONS ·High power ampli...
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