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MJ1800

Inchange Semiconductor
Part Number MJ1800
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 14, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ1800 DESCRIPTION ·High Collector-E...
Datasheet PDF File MJ1800 PDF File

MJ1800
MJ1800

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ1800 DESCRIPTION ·High Collector-Emitter Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for use in vertical deflection amplifier circuits in television receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Voltage 500 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
25 UNIT ℃/W isc w...


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