Silicon PNP Power Transistor
Description
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD678AG
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60V ·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·G=Pb-Free Package
APPLICATIONS ·Designed for use as output devices in complementary
general-purpose amplifier appli...
Inchange Semiconductor
BD678AG PDF File
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