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BDS16

Part Number	BDS16
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 15, 2016
Detailed Description	NCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDS16 DESCRIPTION ·High Voltage: VCEV...
Datasheet	BDS16 PDF File

Overview

NCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDS16 DESCRIPTION ·High Voltage: VCEV= 120V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Current 2 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Tempe...

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