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BDT91F

Inchange Semiconductor
Part Number BDT91F
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 15, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltag...
Datasheet PDF File BDT91F PDF File

BDT91F
BDT91F

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F; 100V(Min)- BDT95F ·Complement to Type BDT92F/94F/96F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT91F 60 VCBO Collector-Base Voltage BDT93F 80 BDT95F 100 VCEO Collector-Emitter Voltage BDT91F 60 BDT93F 80 BDT95F 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 10 ICM Collector Current-Peak 20 IB Base Current-Continuous 4 PC Collector Power Dissipation @ TC=25℃ 32 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.
4 ℃/W BDT91...


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