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BDT94

Inchange Semiconductor
Part Number BDT94
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Nov 15, 2016
Detailed Description isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sus...
Datasheet PDF File BDT94 PDF File

BDT94
BDT94

Overview
isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT92; -80V(Min)- BDT94; -100V(Min)- BDT96 ·Complement to Type BDT91/93/95 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT92 -60 VCBO Collector-Base Voltage BDT94 -80 BDT96 -100 VCEO Collector-Emitter Voltage BDT92 BDT94 BDT96 -60 -80 -100 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -10 ICM Collector Current-Peak -20 IB Base Current-Continuous -4 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDT92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDT92 BDT94 BDT96 IC= -30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.
4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.
3A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= -4A; VCE= -4V VCB= VCBOmax; IE= 0 VCB=1/2VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax V; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -4A ; VCE= -4V hFE-2 DC Current Gain IC= -10A ; VCE= -4V fT Current-Gain—Bandwidth Product Switching times ton Turn-On Time toff Turn-Off Time IC= -500mA ; VCE= -10V IC= -4A; IB1= -IB2= -0.
4A MIN TYP.
MAX UNIT -60 -80 V -100 -1...


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