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M29W800DT

Part Number	M29W800DT
Manufacturer	Numonyx
Description	3V supply flash memory
Published	Nov 15, 2016
Detailed Description	M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage...
Datasheet	M29W800DT PDF File

Overview

M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage – VCC = 2.
7 V to 3.
6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/erase controller – Embedded byte/word program algorithms Erase suspend and resume modes – Read and program another block during erase suspend Unlock bypass program command – Faster production/batch programming Temporary block unprotection mode Common flash interface – 64-bit security code Low power consumption – Standby and automatic s...

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