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2N4396

Part Number	2N4396
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 20, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
Datasheet	2N4396 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 80 V Collector-Emitter Voltage 60 V Emitter-Base Voltage 4 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 62 W Junction Temperature 150 ℃ Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMET...

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