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IDL06G65C5

Part Number	IDL06G65C5
Manufacturer	Infineon
Description	Silicon Carbide Diode
Published	Nov 21, 2016
Detailed Description	SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDL06G65C5 Final Datasheet Rev. 2.0, 2013-12-0...
Datasheet	IDL06G65C5 PDF File

Overview

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDL06G65C5 Final Datasheet Rev.
2.
0, 2013-12-05 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode IDL06G65C5 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology.
The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
ThinPAK 8x8 Bottom view Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse rec...

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IDL06G65C5 Silicon Carbide Diode - Infineon

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