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3DD5024

Part Number	3DD5024
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 22, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide ...
Datasheet	3DD5024 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 8 A IB Base Current- Continuous 4A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Product Specification 3DD5024 isc website：www...

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