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PTAC210802FC

Infineon
Part Number PTAC210802FC
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Nov 27, 2016
Detailed Description PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an...
Datasheet PDF File PTAC210802FC PDF File

PTAC210802FC
PTAC210802FC

Overview
PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features include dual-path design, input matching, high gain and thermallyenhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTAC210802FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.
3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 1...


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