High Power RF LDMOS Field Effect Transistors
Description
PTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package ...
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