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PTFB210801FA

Part Number	PTFB210801FA
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS...
Datasheet	PTFB210801FA PDF File

Overview

PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced packages with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB210801FA Package H-37265-2 ACPR (dBc) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR -15 Adj Lower -20 Adj Upper -25 Alt -30 Efficiency -35 -40 -45 45 40...

Similar Datasheet

PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET - Infineon

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