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PXFC211507SC

Part Number	PXFC211507SC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz Description The PXFC211507SC is a...
Datasheet	PXFC211507SC PDF File

Overview

PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz Description The PXFC211507SC is a 150-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain and a thermally-enhanced package with earless ﬂanges.
Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC211507SC Package H-37248G-4/2 (formed leads) Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, VGS = 2.
6 V, IDQ = 960 mA, ƒ = 2115 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spac...

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PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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