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BD550

Part Number	BD550
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Nov 29, 2016
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)...
Datasheet	BD550 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 110V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as either driver or output unit applications in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 130 V 130 V 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 150 W 200 ...

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