Power MOSFET
Description
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SiHS90N65E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) () typ. at 25 °C Qg (nC) max. Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
591 84 160 Single
0.025
SUPER-247
D
S D G
G
S N-Channel MOSFET
FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and...
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