Dual N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec. No. : C059H8 Issued Date : 2016.11.01 Revised Date : 2018.04.16 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB100A10KRH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
Features
Low On Resistance Simple Drive Requirement Low Gate Charge
ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2...
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