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CS8N70FA9H2-G

Huajing Microelectronics
Part Number CS8N70FA9H2-G
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS8N70F A9H2-G ○R General Description: CS8N70F A9H2-G , the silicon N-channel Enhanced...
Datasheet PDF File CS8N70FA9H2-G PDF File

CS8N70FA9H2-G
CS8N70FA9H2-G


Overview
Silicon N-Channel Power MOSFET CS8N70F A9H2-G ○R General Description: CS8N70F A9H2-G , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features: l Fast Switching l Low ON Resistance(Rdson≤1.
3Ω) l Low Gate Charge (Typical Data:35.
9nC) l Low Reverse transfer capacitances(Typical:11.
2pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of ada...



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