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CS10N80A8D

Huajing Microelectronics
Part Number CS10N80A8D
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS10N80 A8D ○R General Description： CS10N80 A8D, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS10N80A8D PDF File

CS10N80A8D
CS10N80A8D

Overview
Silicon N-Channel Power MOSFET CS10N80 A8D ○R General Description： CS10N80 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 160 0.
72 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Application...


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