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CS6N70FB9D

Huajing Microelectronics
Part Number CS6N70FB9D
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS6N70F B9D ○R General Description： CS6N70F B9D, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS6N70FB9D PDF File

CS6N70FB9D
CS6N70FB9D

Overview
Silicon N-Channel Power MOSFET CS6N70F B9D ○R General Description： CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 700 6 35 1.
4 the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.
5pF) l 100% Single Pulse avalanche energy Test Applications： P...


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