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CS38N30AN

Part Number	CS38N30AN
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS38N30 AN ○R General Description： CS38N30 AN, the silicon N-channel Enhanced VDMOSFETs...
Datasheet	CS38N30AN PDF File

Overview

Silicon N-Channel Power MOSFET CS38N30 AN ○R General Description： CS38N30 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-3PN, which accords with the RoHS standard.
.
Features： l Fast Switching l Low ON Resistance(Rdson≤0.
085Ω) l Low Gate Charge (Typical Data:123nC) l Low Reverse transfer capacitances(Typical:82pF) l 100% Single Pulse avalanche energy Test 300 38.
5 290 0.
045 V A W Ω Applications： Power switch circuit of electric welder.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 ...

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CS38N30AN Silicon N-Channel Power MOSFET - Huajing Microelectronics

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