Silicon N-Channel Power MOSFET
Description
Silicon N-Channel Power MOSFET
CS630 A4H
○R
General Description：
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
200 9 83
0.23
the avalanche energy. The transistor can be used in various
power ...
Huajing Microelectronics
CS630A4H PDF File
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