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BT30N60ANF

Part Number	BT30N60ANF
Manufacturer	Huajing Microelectronics
Description	Silicon FS Planar IGBT
Published	Dec 6, 2016
Detailed Description	Silicon FS Planar IGBT BT30N60ANF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS te...
Datasheet	BT30N60ANF PDF File

Overview

Silicon FS Planar IGBT BT30N60ANF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot （TC=25℃） VCE(SAT) 600 30 312 2.
0 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
0V @ IC = 30A and TC = 25°C l Extremely enhanced avalanche capability Applications： Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF Coll...

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BT30N60ANF Silicon FS Planar IGBT - Huajing Microelectronics

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