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IPA65R225C7

Infineon
Part Number IPA65R225C7
Manufacturer Infineon
Description MOSFET
Published Dec 12, 2016
Detailed Description IPA65R225C7 MOSFET 650VCoolMOSªC7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,...
Datasheet PDF File IPA65R225C7 PDF File

IPA65R225C7
IPA65R225C7

Overview
IPA65R225C7 MOSFET 650VCoolMOSªC7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.
Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.
Features •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb-freeplating,halogenfreemoldcompound Benefits •Enablinghighersystemefficiency •Enablinghigherfrequency/increasedpowerdensitysolutions •Systemcost/sizesavingsduetoreducedcoolingrequirements •Highersystemreliabilityduetoloweroperatingtemperatures Potentialapplications PFCstagesandhardswitchingPWMstagesfore.
g.
Computing,Server, Telecom,UPSandSolar.
Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 225 mΩ Qg.
typ 20 nC ID,pulse 41 A Eoss@400V 2.
3 µJ Body diode di/dt 55 A/µs Type/OrderingCode IPA65R225C7 Package PG-TO 220 FullPAK Marking 65C7225 PG-TO220FP Drain Pin 2 Gate *1 Pin 1 *1: Internal body diode Source Pin 3 RelatedLinks see Appendix A Final Data Sheet 1 Rev.
2.
1,2020-01-29 650VCoolMOSªC7PowerDevice IPA65R225C7 TableofContents Description .
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