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IPD5N25S3-430

Infineon
Part Number IPD5N25S3-430
Manufacturer Infineon
Description Power-Transistor
Published Dec 15, 2016
Detailed Description OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175...
Datasheet PDF File IPD5N25S3-430 PDF File

IPD5N25S3-430
IPD5N25S3-430

Overview
OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD5N25S3-430 Product Summary V DS R DS(on),max ID 250 V 430 mW 5A PG-TO252-3-313 Type IPD5N25S3-430 Package PG-TO252-3- Marking 3N25430 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation ID I D,pulse E AS I AS dv /dt V GS P tot T C=25°C, V GS=10V T C=100°C, V GS=10V1) T C=25°...


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