PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
gain and ...
