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APTM100H45FT3G
MOSFET Power Module
Description
APTM100H45FT3G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C 13 14 Q1 Q3 18 22 7 19 23 8 Q2 11 10 Q4 26 4 27 3 29 30 15 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 34 78 14 13 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …...
Microsemi
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