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IPP114N12N3G

Infineon
Part Number IPP114N12N3G
Manufacturer Infineon
Description Power-Transistor
Published Dec 27, 2016
Detailed Description OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very l...
Datasheet PDF File IPP114N12N3G PDF File

IPP114N12N3G
IPP114N12N3G

Overview
OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G IPP114N12N3 G 120 V 11.
4 mΩ 75 A Package Marking PG-TO220-3 114N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse ...


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