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IXTA3N150HV

Part Number	IXTA3N150HV
Manufacturer	IXYS
Description	High Voltage Power MOSFET
Published	Dec 31, 2016
Detailed Description	Preliminary Technical Information High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic D...
Datasheet	IXTA3N150HV PDF File

Overview

Preliminary Technical Information High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N150HV VDSS = ID25 = RDS(on) ≤ 1500V 3A 7.
3Ω TO-263 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Maximum Ratings 1500 1500 V V ±30 V ±40 V 3A 9A 3A 250 mJ 5 250 - 55 .
.
.
+150 150 - 55 .
.
.
+150 300 260 2.
5 V/ns W °C °C °C °C °C g Symbol Test Conditi...

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IXTA3N150HV High Voltage Power MOSFET - IXYS

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