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NGTB40N65FL2WG

ON Semiconductor
Part Number NGTB40N65FL2WG
Manufacturer ON Semiconductor
Description IGBT
Published Jan 2, 2017
Detailed Description IGBT - Field Stop II NGTB40N65FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
Datasheet PDF File NGTB40N65FL2WG PDF File

NGTB40N65FL2WG
NGTB40N65FL2WG

Overview
IGBT - Field Stop II NGTB40N65FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter Voltage Collector Current @ TC = 25°C @ TC = 100°C Diode Forward Current @ TC = 25°C @ TC = 100°C Diode Pulsed Current TPULSE Limited by TJ Max Pulsed Collector Current, Tpulse Limited by TJmax Short−circuit Withstand Time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C Gate−emitter Voltage Transient Gate−emitter Voltage (TPULSE = 5 ms, D < 0.
10) Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction Temperature Range VCES 650 V IC A 80 40 IF A 80 40 IFM 160 A ICM 160 A tSC 5 ms VGE ±20 V ±30 V PD W 366 183 TJ −55 to +175 °C Storage Temperature Range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
onsemi.
com 40 A, 650 V VCEsat = 1.
7 V Eoff = 0.
44 mJ C G E G CE TO−247 CASE 340AM MARKING DIAGRAM 40N65FL2 AYWWG 40N65FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device NGTB40N...


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