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TK80E07NE

Toshiba
Part Number TK80E07NE
Manufacturer Toshiba
Description Silicon N Channel MOS Type Field Effect Transistor
Published Jan 6, 2017
Detailed Description TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE „ E-Bike/UPS/Inverter Unit: ...
Datasheet PDF File TK80E07NE PDF File

TK80E07NE
TK80E07NE

Overview
TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE „ E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drain−source on-resistance : RDS(ON) = 6.
9 mΩ (typ.
) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 0.
3 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) DC (Note 1,4) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche ene...


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