IRF7341GPbF
Advanced Process Technology ÿDual N-Channel MOSFET ÿUltra Low On-Resistance ÿ175°C Operating Temperature ÿ Repetitive Avalanche Allowed up to Tjmax ÿLead-Free ÿHalogen-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon ar...
