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STGYA120M65DF2

STMicroelectronics
Part Number STGYA120M65DF2
Manufacturer STMicroelectronics
Description IGBT
Published Jan 7, 2017
Detailed Description STGYA120M65DF2 Datasheet Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package TA...
Datasheet PDF File STGYA120M65DF2 PDF File

STGYA120M65DF2
STGYA120M65DF2

Overview
STGYA120M65DF2 Datasheet Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) Features • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.
65 V (typ.
) @ IC = 120 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode Applications • Motor control • UPS • PFC • General purpose inverter Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure.
The device is part of t...


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