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STP11N60DM2

Part Number	STP11N60DM2
Manufacturer	STMicroelectronics
Description	N-CHANNEL POWER MOSFET
Published	Jan 7, 2017
Detailed Description	STP11N60DM2 N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production dat...
Datasheet	STP11N60DM2 PDF File

Overview

STP11N60DM2 N-channel 600 V, 0.
370 Ω typ.
, 10 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STP11N60DM2 VDS @ TJmax.
650 V RDS(on) max.
0.
420 Ω ID 10 A PTOT 110 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demand...

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STP11N60DM2 N-CHANNEL POWER MOSFET - STMicroelectronics

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