Dual N-Channel MOSFET
Description
FDMB3900AN Dual N-Channel PowerTrench® MOSFET
FDMB3900AN
Dual N-Channel PowerTrench® MOSFET
25 V, 7.0 A, 23 mΩ
June 2013
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching speed
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s adv...
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